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  Semiconductor MSM6791
MSM6791 DRAM Interface IC
Semiconductor
GENERAL DESCRIPTION
The MSM6791 can be used as a memory for voice data by connecting OKI solid-state recording and playback ICs (MSM6688 and MSM6788).
FEATURES
* DRAM ( 1-bit configuration) 1M-bit DRAM (MSM511000A, MSM511001A) : 8 pcs. can be connected. 4M-bit DRAM (MSM514100A, MSM514101A) : 8 pcs. can be connected. 16M-bit DRAM (MSM5116100A) : 2 pcs. can be connected. Note: MSM511002A/MSM514102A that corresponds to a static column mode cannot be used. 5V single rail 8MHz 10kbps, 12.5kbps, 16kbps in MSM6788 connection (8kHz sampling fixation) 7.5kbps, 9.4kbps, 12kbps in MSM6788 connection (6kHz sampling fixation) 16kbps~32kbps in MSM6688 connection (4kHz~8kHz sampling)
* Power supply voltage : * Built-in refresh circuit (RAS only refresh) * Original oscillation frequency: * Bit rates:
* Package: 44-pin plastic QFP (QFP44-P-910-2K) (Product name : MSM6791GS-2K)
Semiconductor
MSM6791
BLOCK DIAGRAM
TEST TEST GND GND V
DD
VDD
SAD Sin Pout 13 13 Column or Row Address Multiplexer Row.A11 10 TAS Address Multiplexer 12 A0 A1 A2 A3 A4 A5 A6 A7 R Column Address Counter Rerfresh Counter 12 A8 A9 A10 A11
CK SAS
Column and Row Address Counter LD CK
3
XT XT OSC
WE RWCK CS1 CS2 CS3 CS4 Timing Controller DRAM Controller CAS Controller
CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7
M1 M2
CAS8
XWE RAS DOUT XDIN
MSM6791
Semiconductor
PIN CONFIGURATION (TOP VIEW)
A11 A10 VDD A6 A5 A4 36 A3 35 A9 A8 A7 A2 34
44
43
42
41
40
39
38
RWCK DOUT WE SAD SAS GND TEST TAS CS1 CS2 NC
37
1 2 3 4 5 6 7 8 9 10 11
33 32 31 30 29 28 27 26 25 24 23
A1 A0 RAS XDIN XWE GND XT XT CAS8 CAS7 CAS6
12
13
14
15
16
17
18
19
20 CAS3
21 CAS4
CS3
CS4
M1
M2
TEST
CAS1
CAS2
44-Pin Plastic QFP NC: No-connection pin
CAS5
VDD
22
Semiconductor
MSM6791
PIN DESCRIPTION
Symbol VDD GND XT XT TEST TEST SAD SAS TAS Type - - I O I I I I I Power supply Ground Oscillator Oscillator IC test. Use this pin by setting to `L' level. IC test. Use this pin by setting to `H' level. Read/write head address Clock to take the serial address data in the internal register Serial address data taken in the address register to the internal address counter Clock to read and write the information of the data register. The internal operation starts by the fall edge of RWCK. In a read mode, the data taken in XDIN is latched and it is output to the RWCK I DOUT pin. In a write mode, the DI/O output data of MSM6688/6788/6789 is taken in the DIN pin of the DRAM. In addition, the internal address counter automatically increments by the fall edge of RWCK and the address data output from A0 to A11. WE XWE A0~A11 RAS CAS1 ~ O I O DRAM control Data input Data output Chip select data in connecting DRAM By inputting a "L" level signal to each pin, up to 32M-bit of memory (8M-bit of memory for I each pin) can be controlled for four Pins. These pins become the input pins to select the highest address in 16M-bit DRAM connection. Set the connecting pattern of DRAM. M1 I M2 Connecting Mode Mode 0 Mode 1 Mode 2 Mode 3 M2 L L H H M1 L H L H DRAM Connecting Pattern 1M-bit DRAM 1~8pcs. connectable 4M-bit DRAM 1~8pcs. connectable (4M-bit DRAM 1pcs.) + (1M-bit DRAM 0~3pcs.) connectable 16M-bit DRAM 1~2pcs. connectable CAS8 XDIN DOUT CS1 CS2 CS3 CS4 I O O O Select a read mode and write mode. DRAM control DRAM address DRAM control Description
MSM6791
Semiconductor
ABSOLUTE MAXIMUM RATINGS
Parameter Supply Voltage Input Voltage Output Voltage Input Current Output Current Storage Temperature Symbol VDD VI VO II IO TSTG -- GND = 0V Ta = 25C Condition Rating -0.5 to +7 -0.5 to VDD+0.5 -0.5 to VDD+0.5 -10 to +10 -20 to +20 -65 to +150 Unit V V V mA mA C
RECOMMENDED OPERATING CONDITIONS
GND = 0V Parameter Supply Voltage Operating Temperature Oscillation Frequency Symbol VDD TOP fOSC Range 4.5 to 5.5 -40 to +85 8 Unit V C MHz
ELECTRICAL CHARACTERISTICS
DC Characteristics
(Ta = -40 to +85C, VDD = 5V10% GND = 0V) Parameter "H" Level Input Voltage "L" Level Input Voltage "H" Level Input Current "L" Level Input Current 3-state Output Leak Current (includes open-drain output) H" Level Output Voltage "L" Level Output Voltage Operational Current Consumption Symbol VIH VIL IIH IIL IOZH IOZL VOH VOL IDD Condition -- -- VIH = VDD VIL = GND VOH = VDD VOL = GND IOH = -5.0 mA IOL = 5.0 mA Output open fOSC = 8MHz VIH = VDD VIL = GND -- -- 3 mA Min. 3.5 -0.3 -- -10 -- -10 2.4 VSS Typ. *1 -- -- 0.01 -0.01 0.01 -0.01 4.20 0.24 Max. VDD+0.3 1.5 10 -- 10 -- VDD 0.5 Unit V V mA mA mA mA V V
*1 TYP means VDD=5.0V, Ta=25C
1M-bit DRAM 8
Semiconductor
AVDD VCC RAS WE DOUT DIN RAS XWE XDIN
APPLICATION CIRCUITS
DVDD
TEST VDD VDD
MSM511000A (1)
MSM511000A (2)
MSM511000A (3)
MSM511000A (4)
MSM511000A (5)
MSM511000A (6)
MSM511000A (7)
MSM511000A (8)
RSEL1 RSEL2
SADX SAS TAS RWCK WE DI/O A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND
SAD SAS TAS RWCK WE DOUT
MSM6791
AGND
MSM6688/6788
CS1 CS2 CS3 CS4 M1 M2 XT XT TEST GND GND CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8
CS1 CS2 CS3 CS4
DGND
8MHz
Figure 2. Application Circuit Example with eight 1M-bit DRAM connections. (connection mode 0)
MSM6791
MSM6791
4M-bit DRAM 8
AVDD VDD VCC RAS WE DOUT DIN RAS XWE XDIN
DVDD
TEST VDD
MSM514100A (2)
MSM514100A (3)
MSM514100A (4)
MSM514100A (5)
MSM514100A (6)
MSM514100A (7)
MSM514100A (8)
APPLICATION CIRCUITS (Continued)
MSM514100A (1)
RSEL1 RSEL2
SADX SAS TAS RWCK WE DI/O
SAD SAS TAS RWCK WE DOUT
MSM6791
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND
AGND DGND TEST GND GND
MSM6688/6788
CS1 CS2 CS3 CS4 M1 M2 XT XT CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8
CS1 CS2 CS3 CS4
8MHz
Semiconductor
Figure 3. Application Circuit Example with eight 4M-bit DRAM connections. (connection mode 1)
4M-bit DRAM 1
1M-bit DRAM 3
Semiconductor
AVDD VDD VCC RAS WE DOUT DIN RAS WE DOUT DIN RAS WE DOUT DIN VCC VCC VCC
DVDD
TEST VDD
RAS XWE XDIN
APPLICATION CIRCUITS (Continued)
RSEL1 RSEL2
SADX SAS TAS RWCK WE DI/O
SAD SAS TAS RWCK WE DOUT
MSM514100A (1)
MSM511000A (2)
MSM511000A (3)
MSM511000A (4)
MSM6791
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND GND CAS CAS
RAS WE DOUT DIN A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 GND CAS
AGND DGND
MSM6688/6788
CS1 CS2 CS3 CS4 M2 M1 CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 XT XT 8MHz TEST GND GND
CS1 CS2 CS3 CS4
GND
Figure 4. Application Circuit Example with one 4M-bit DRAM and three 1M-bit DRAM connections. (connection mode 2)
MSM6791
MSM6791
16M-bit DRAM 2
AVDD VDD VCC RAS WE DOUT DIN RAS WE DOUT DIN VCC VCC VCC RAS XWE XDIN
DVDD
TEST VDD
APPLICATION CIRCUITS (Continued)
RSEL1 RSEL2
SADX SAS TAS RWCK WE DI/O
SAD SAS TAS RWCK WE DOUT
MSM5116100 (1)
MSM5116100 (2)
MSM6791
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND GND
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
Semiconductor
AGND DGND
MSM6688/6788
CS1 CS2 CS3 CS4 CS1 CS2 CS3 CS4 M2 M1 CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 XT XT 8MHz TEST GND GND
CAS GND GND
Figure 5. Application Circuit Example with two 16M-bit DRAM connections. (connection mode 3)
4M-bit DRAM 8
AVDD VCC RAS XWE DOUT DIN RAS XWE XDIN
DVDD
TEST VDD VDD
Semiconductor
MSM514100A (1)
MSM514100A (2)
MSM514100A (3)
MSM514100A (4)
MSM514100A (5)
MSM514100A (6)
MSM514100A (7)
MSM514100A (8)
RSEL1 RSEL2
SADX SAS TAS RWCK WE DI/O SADY
SAD SAS TAS RWCK WE DOUT
DROM
A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 CAS GND
MSM6791
APPLICATION CIRCUITS (Continued)
AGND
MSM6688/6788
CS1 CS2 CS3 CS4 M1 M2 XT XT 8MHz TEST GND GND CAS1 CAS2 CAS3 CAS4 CAS5 CAS6 CAS7 CAS8 VCC SADX SASX SADY SASY RDCK TAS DOUT CS1 CS2 TEST GND SADX SASX SADY SASY RDCK TAS VCC
CS1 CS2 CS3 CS4
DGND
Figure 6. Application Circuit Example when DRAM is used as a record/ playback memory of MSM6688/6788 and two 2M-bit serial voice ROMs (MSM6596-XXX) are used.
MSM6596-XXX (1)
MSM6791
DOUT CS1 CS2 TEST GND
MSM6596-XXX (2)


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